IRFD110 N-Channel Power MOSFET, 100V, 1A, DIP-4
€3.50
The IRFD110 is an N-Channel Power MOSFET designed for high-speed switching applications. It features a 100V drain-source voltage and a 1A continuous drain current in a compact DIP-4 package.
The IRFD110 is a robust N-Channel Power MOSFET from International Rectifier (now Infineon), optimized for efficient power management and switching. Its design ensures fast switching speeds and low on-resistance, making it suitable for various electronic circuits.
- Type: N-Channel Power MOSFET
- Drain-Source Voltage (Vds): 100V
- Continuous Drain Current (Id): 1A (at Tc=25°C)
- On-Resistance (Rds(on)): 1.2 Ohm (max)
- Package: DIP-4 (Dual In-line Package) / TO-237
- Features: Fast switching, low gate charge, avalanche energy rated
Typical Applications:
- Switching power supplies
- Motor control circuits
- Lighting applications
- DC-DC converters
- General purpose power switching
B2302
10 Items
Specific References
- MPN
- IRFD110
The IRFD110 is an N-Channel Power MOSFET designed for high-speed switching applications. It features a 100V drain-source voltage and a 1A continuous drain current in a compact DIP-4 package.