OSG55R092H N-Channel Power MOSFET 600V 40A TO-247
€15.00
The OSG55R092H is a high-voltage N-Channel SuperFET® III MOSFET from ON Semiconductor, designed for high-efficiency power conversion applications. It features a low on-resistance of 0.092Ω and a robust TO-247 package.
The OSG55R092H is an advanced N-Channel SuperFET® III MOSFET from ON Semiconductor, offering superior performance for demanding power applications. This device is optimized for high-efficiency, low-EMI, and rugged operation, making it ideal for various power conversion systems.
- Type: N-Channel SuperFET® III MOSFET
- Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 40A (at TC=25°C)
- On-Resistance (RDS(on)): 0.092Ω (max @ VGS=10V, ID=20A)
- Package: TO-247
- Low Gate Charge: Enhances switching performance
- Low Effective Output Capacitance: Improves efficiency
Typical Applications:
- Server and Telecom Power Supplies
- EV Charger
- Industrial Power Supplies
- PFC (Power Factor Correction) Stages
- Switching Power Supplies (SMPS)
C1206
10 Items
Specific References
- MPN
- OSG55R092H
New
The OSG55R092H is a high-voltage N-Channel SuperFET® III MOSFET from ON Semiconductor, designed for high-efficiency power conversion applications. It features a low on-resistance of 0.092Ω and a robust TO-247 package.