IRF520 N-Channel HEXFET Power MOSFET, 100V, 9.2A, TO-220
€3.00
The IRF520 is a robust N-Channel HEXFET Power MOSFET designed for high-speed switching and power management applications. It offers a drain-source voltage of 100V and a continuous drain current of 9.2A.
The IRF520 is an N-Channel HEXFET Power MOSFET from International Rectifier, housed in a TO-220 package. This transistor is engineered for applications requiring high-speed switching and efficient power handling. Its low on-resistance and high current capability make it suitable for a wide range of electronic circuits.
- Channel Type: N-Channel
- Drain-Source Voltage (Vds): 100V
- Continuous Drain Current (Id @ Tc=25°C): 9.2A
- Pulsed Drain Current (Idm): 40A
- Drain-Source On-Resistance (Rds(on) @ Vgs=10V): 0.27 Ohm (max)
- Power Dissipation (Pd @ Tc=25°C): 60W
- Gate-Source Voltage (Vgs): ±20V
- Package: TO-220
Typical Applications:
- Motor control circuits
- Switching power supplies
- DC-DC converters
- Audio amplifiers
- Solenoid and relay drivers
- High-speed switching applications
A1301
46 Items
Specific References
- MPN
- IRF520
New
The IRF520 is a robust N-Channel HEXFET Power MOSFET designed for high-speed switching and power management applications. It offers a drain-source voltage of 100V and a continuous drain current of 9.2A.