IRLR2905 N-Channel HEXFET Power MOSFET, 55V 42A, D2PAK (TO-263)
€2.19
The IRLR2905 is a robust N-Channel HEXFET Power MOSFET designed for high-performance applications, offering a continuous drain current of 42A and a drain-source voltage of 55V.
The IRLR2905 is an N-Channel HEXFET Power MOSFET from International Rectifier (now Infineon), known for its advanced processing technology that yields extremely low on-resistance per silicon area. This feature, combined with a fast switching speed and ruggedized device design, provides an efficient and reliable solution for various power management applications.
- Type: N-Channel MOSFET
- Drain-Source Voltage (Vds): 55V
- Continuous Drain Current (Id): 42A (at Tc=25°C)
- On-Resistance (Rds(on)): 0.022 Ohm (max) at Vgs=10V
- Package: D2PAK (TO-263) for surface mount applications
- Technology: HEXFET Power MOSFET
Typical applications include high-efficiency DC-DC converters, motor control, automotive applications, and synchronous rectification in various power supplies.
B2804,E401
230 Items
Specific References
- MPN
- IRLR2905
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The IRLR2905 is a robust N-Channel HEXFET Power MOSFET designed for high-performance applications, offering a continuous drain current of 42A and a drain-source voltage of 55V.