4.5A,500V,1.5Ω IRF830 N-Channel MOSFET
3,50 EUR
- N-Channel Power MOSFET
- Continuous Drain Current (ID): 4.5A
- Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
- Drain to Source Breakdown Voltage: 500V
- Drain Source Resistance (RDS) is 1.5 Ohms
- Rise time and fall time is 16nS and 16nS
- Available in To-220 package
E215
20 Copë