18A 200V IRF640N N-channel MOSFET

Type Designator: IRF640N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 18 A

Total Gate Charge (Qg): 44.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm

Package: TO220AB