IR2101S 600 V high-side and low-side gate driver IC

600 V high and low-side gate driver IC with typical 0.21 A source and 0.36 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs with level-shift technology.

Summary of Features:
   

• Floating channel designed for bootstrap operation
     
• Fully operational to +600 V
     
• Tolerant to negative transient voltage
     
• dV/dt immune
     
• Gate drive supply range from 10 to 20 V
     
• Undervoltage lockout
    
• 3.3 V, 5 V, and 15 V logic input compatible
     
• Matched propagation delay for both channels
     
• Outputs in phase with inputs (IR2101) or out of phase with inputs (IR2102)