IR2106S 600 V high-side and low-side gate driver IC SOP-8
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  • IR2106S 600 V high-side and low-side gate driver IC SOP-8
  • IR2106S 600 V high-side and low-side gate driver IC SOP-8

IR2106S 600 V high-side and low-side gate driver IC SOP-8

5,00 EUR
Sasia

600 V High and Low Side Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs

The IR2106(4)(S) are high voltage,
high speed power MOSFET and
IGBT drivers with independent high
and low side referenced output channels.
Proprietary HVIC and latch
immune CMOS technologies enable
ruggedized monolithic construction.
The logic input is compatible with
standard CMOS or LSTTL output,
down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high
side configuration which operates up to 600 volts.

D0302
24 Copë