Characteristics of TIP110 Transistor
- Type: NPN
- Collector-Emitter Voltage,max:60 V
- Collector-Base Voltage,max:60 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 2 A
- Collector Dissipation: 50 W
- DC Current Gain (hfe): 1000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
The complementary PNP transistor to the TIP110 is the TIP115