The MJ2955 PNP Power Transistor is manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications
MJ2955 Features
DC Current Gain — hFE = 20–70 @ IC = 4 Adc
Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
Excellent Safe Operating Area
Type Designator: MJ2955
Material of Transistor: Si
Polarity: PNP
MJ2955 Equivalent/Alternate:
MJ2955, MJ2955A, MJ2955SM, MJ2955G, GMJ2955, 2N3055A
Application
General purpose
Audio Amplifier
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