MJD127 J127G TRANS DARL PNP 8A 100V DPAK
€2.50
the MJD127 is a silicon PNP darlington transistor preferred for use in general purpose and low speed switching applications
Uce/Ucb: -100/-100V
Ic: -8A
β (Ic/Ib): 0.1-12k
N: 20W
F: >4MHz
Tmax: 150°C
Type Designator: MJD127G
SMD Transistor Code: J127G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-252
A0304
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the MJD127 is a silicon PNP darlington transistor preferred for use in general purpose and low speed switching applications
Uce/Ucb: -100/-100V
Ic: -8A
β (Ic/Ib): 0.1-12k
N: 20W
F: >4MHz
Tmax: 150°C