MJD122 NPN Darlington Transistor 8A 100V DPAK
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  • MJD122 NPN Darlington Transistor 8A 100V DPAK
  • MJD122 NPN Darlington Transistor 8A 100V DPAK
  • MJD122 NPN Darlington Transistor 8A 100V DPAK
  • MJD122 NPN Darlington Transistor 8A 100V DPAK

MJD122 NPN Darlington Transistor, 8A 100V, DPAK (TO-252)

€2.50

The MJD122 is a silicon NPN Darlington power transistor designed for general purpose amplifier and low-speed switching applications. It features a high DC current gain and a compact DPAK (TO-252) surface-mount package.

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The MJD122 is a high-performance NPN Darlington transistor, ideal for applications requiring high current gain and moderate power handling in a compact surface-mount form factor. Its Darlington configuration provides a very high current gain, simplifying drive requirements.

  • Transistor Type: NPN Darlington
  • Collector-Emitter Voltage (VCEO): 100V
  • Collector Current (IC): 8A (Continuous), 16A (Peak)
  • Power Dissipation (PD): 20W
  • DC Current Gain (hFE): 1000 (min) at 3A
  • Operating Temperature: -65 to +150°C
  • Package: DPAK (TO-252)

Typical Applications:

  • General purpose amplification
  • Low-speed switching applications
  • Power management circuits
  • Motor control
  • Solenoid drivers
A0907,R3213
29 Items

Specific References

MPN
MJD122
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