MJD350 PNP High Voltage Power Transistor, -300V, 0.5A, DPAK
€2.50
The MJD350 is a silicon PNP power transistor designed for high voltage applications. It features a collector-emitter voltage of -300V and a continuous collector current of -0.5A, housed in a surface-mount DPAK (TO-252) package.
The MJD350 is a robust PNP power transistor, ideal for applications requiring high voltage and moderate current handling. Its DPAK (TO-252) package makes it suitable for surface-mount designs, offering efficient thermal performance.
- Type: PNP Power Transistor
- Collector-Emitter Voltage (Vce): -300V
- Collector-Base Voltage (Vcb): -300V
- Continuous Collector Current (Ic): -0.5A
- Peak Collector Current (Icm): -1A
- Power Dissipation (Ptot): 15W
- DC Current Gain (hFE): 30-240 (at Ic = -100mA, Vce = -10V)
- Junction Temperature (Tj max): 150°C
- Package: DPAK (TO-252)
Typical Applications:
- Line operated audio output amplifiers
- Switchmode power supply drivers
- General purpose switching applications
- Voltage regulation circuits
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Specific References
- MPN
- MJD350
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The MJD350 is a silicon PNP power transistor designed for high voltage applications. It features a collector-emitter voltage of -300V and a continuous collector current of -0.5A, housed in a surface-mount DPAK (TO-252) package.