2SK3569 N-Channel Power MOSFET, 600V, 10A, TO-3P
€5.00
The 2SK3569 is a high-voltage N-channel power MOSFET designed for switching applications. It features a drain-source voltage of 600V and a continuous drain current of 10A.
The Toshiba 2SK3569 is an N-channel power MOSFET engineered for high-speed switching applications, offering robust performance in various power management circuits. Its low on-resistance and fast switching characteristics make it suitable for efficient power conversion.
- Type: N-Channel Power MOSFET
- Drain-Source Voltage (VDSS): 600V
- Continuous Drain Current (ID): 10A
- Package: TO-3P
- Low On-Resistance: Enhances efficiency
- Fast Switching Speed: Ideal for high-frequency operations
Typical Applications:
- Switching power supplies (SMPS)
- DC-DC converters
- Motor control circuits
- Power factor correction (PFC)
- Industrial power systems
R3434
20 Items
Specific References
- MPN
- 2SK3569
The 2SK3569 is a high-voltage N-channel power MOSFET designed for switching applications. It features a drain-source voltage of 600V and a continuous drain current of 10A.