IRFZ34N N -Channel MOSFET 55V 29A

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 68 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 29 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 34(max) nC

Rise Time (tr): 49 nS

Drain-Source Capacitance (Cd): 240 pF

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm