Infineon IPD26N06S2L-35 N-Channel MOSFET, 55V 30A, DPAK (TO-252)
€4.00
The Infineon IPD26N06S2L-35 (marked 2N06L35) is an N-Channel Power MOSFET designed for high-efficiency applications. It features a drain-source voltage of 55V and a continuous drain current of 30A in a compact DPAK (TO-252) package.
This Infineon IPD26N06S2L-35 N-Channel Power MOSFET, identifiable by the marking 2N06L35, is engineered for robust performance in various power management circuits. Its low on-state resistance (Rds(on)) and fast switching characteristics make it ideal for demanding applications.
- Type Designator: IPD26N06S2L-35
- Marking Code: 2N06L35
- Transistor Type: N-Channel MOSFET
- Maximum Drain-Source Voltage (Vds): 55 V
- Maximum Continuous Drain Current (Id): 30 A
- Maximum Power Dissipation (Pd): 68 W
- Drain-Source On-State Resistance (Rds(on)): 0.035 Ohm (35 mOhm)
- Package: DPAK (TO-252)
Typical Applications:
- Switching power supplies
- DC/DC converters
- Motor control
- Automotive applications
- Load switching
C1202
20 Items
Specific References
- MPN
- IPD26N06S2L-35
The Infineon IPD26N06S2L-35 (marked 2N06L35) is an N-Channel Power MOSFET designed for high-efficiency applications. It features a drain-source voltage of 55V and a continuous drain current of 30A in a compact DPAK (TO-252) package.