The IRFP360 is a robust N-Channel Power MOSFET designed for high-speed switching applications. It features a drain-source voltage of 400V and a continuous drain current of 23A.
The IRFP360 from International Rectifier (now Infineon) is a high-performance N-Channel Power MOSFET built with advanced processing technology to achieve extremely low on-resistance per silicon area. This feature, combined with a fast switching speed and ruggedized device design, provides an efficient and reliable device for use in a wide variety of applications.
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