IRFB4110 N-Channel Power MOSFET, 100V 180A, TO-220AB
€9.00
The IRFB4110 is a robust N-channel Power MOSFET designed for high-current switching applications, featuring a 100V drain-source voltage and 180A continuous drain current in a TO-220AB package.
The IRFB4110 is a high-performance N-channel Power MOSFET from International Rectifier (now Infineon), optimized for applications requiring high power density and efficiency. Its low on-resistance and high current capability make it suitable for demanding power management designs.
- Type: N-channel MOSFET
- Drain-to-Source Breakdown Voltage (VDSS): 100 V
- Continuous Drain Current (ID): 180 A (at TC=25°C)
- Drain-Source On-State Resistance (RDS(on)): 4.5 mΩ (typical at VGS=10V, ID=110A)
- Gate-to-Source Voltage (VGS), max: ±20 V
- Total Gate Charge (QG): 150 nC (typical)
- Power Dissipation (PD): 370 W (at TC=25°C)
- Package: TO-220AB
Typical Applications:
- High-efficiency DC-DC converters
- Motor control
- Uninterruptible Power Supplies (UPS)
- Switching power supplies
- Industrial power management systems
A2901
58 Items
Specific References
- MPN
- IRFB4110
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The IRFB4110 is a robust N-channel Power MOSFET designed for high-current switching applications, featuring a 100V drain-source voltage and 180A continuous drain current in a TO-220AB package.