Infineon SPP11N60C3 N-Channel MOSFET, 600V 11A, TO-220
€7.50
The Infineon SPP11N60C3 is a robust N-Channel MOSFET designed for high-voltage switching applications, featuring a 600V drain-source voltage and 11A drain current in a TO-220 package.
The SPP11N60C3 from Infineon is an N-Channel power MOSFET, optimized for high-speed switching applications. It offers excellent performance with a low on-state resistance and high avalanche ruggedness, making it suitable for various power management designs.
- Type of Control Channel: N-Channel
- Maximum Drain-Source Voltage (Vds): 600 V
- Maximum Drain Current (Id): 11 A (at Tc=25°C)
- Maximum Drain-Source On-State Resistance (Rds(on)): 0.38 Ohm
- Maximum Power Dissipation (Pd): 125 W
- Maximum Gate-Source Voltage (Vgs): ±20 V
- Package: TO-220
Typical applications include switched-mode power supplies (SMPS), power factor correction (PFC) stages, lighting applications, and various industrial power systems requiring efficient high-voltage switching.
A2507
7 Items
Specific References
- MPN
- SPP11N60C3
New
The Infineon SPP11N60C3 is a robust N-Channel MOSFET designed for high-voltage switching applications, featuring a 600V drain-source voltage and 11A drain current in a TO-220 package.