2PG003 N-Channel Enhancement Mode IGBT, TO-220F, 600V
€7.00
The 2PG003 is an N-channel enhancement mode IGBT designed for high-speed switching applications, particularly in plasma display panel drives. It features a low collector-emitter saturation voltage and fast fall time, making it ideal for efficient power management.
The 2PG003 is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) from Panasonic, optimized for demanding high-speed switching applications. Its robust design in a fully insulated TO-220F package ensures reliable operation in various power electronics circuits.
- Type: N-Channel Enhancement Mode IGBT
- Package: TO-220F (Fully Insulated)
- Collector-Emitter Voltage (VCE): 600V (typical for this series)
- Low Collector-Emitter Saturation Voltage: VCE(sat) < 2.4V
- High-Speed Switching: Fall time (tf) = 200 ns (typ.)
Typical Applications:
- Plasma Display Panel (PDP) drive circuits
- High-speed switching power supplies
- Inverters and converters
- Motor control applications
C3201
10 Items
Specific References
- MPN
- 2PG003
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The 2PG003 is an N-channel enhancement mode IGBT designed for high-speed switching applications, particularly in plasma display panel drives. It features a low collector-emitter saturation voltage and fast fall time, making it ideal for efficient power management.